sapphire wafer 12inch 300mm Double side polish，single side polish

12-Inch Sapphire Wafer Product Description

We manufacture our 12-inch sapphire wafers using the Kyropoulos (KY) method, which guarantees ultra-high purity (>99.999% Al2O3) and superior crystalline uniformity. The standard diameter is 300 ± 0.2 mm, and thickness options include 800 μm Moreover 1000 μm, and 1200 μm.

These wafers offer outstanding mechanical strength, excellent thermal conductivity, and long-term stability.

They serve as the ideal material for GaN-on-sapphire epitaxy, semiconductor device processing and micro-LED displays and and advanced optoelectronics.

The wafers feature a C-plane (0001) orientation with off-set angles of 0.0° ± 0.3° toward both the M-axis and A-axis Moreover ensuring precise alignment.

Each wafer includes an A-plane (0001) notch at 0° ± 1° orientation. The notch depth ranges from 1.0 to 1.25 mm, and the angle falls between 85° and 95°, which supports accurate lithography processes.

Additionally, the front surface comes epi-ready polished (Ra < 0.3 nm) and  which optimizes GaN-on-sapphire deposition. The back surface is lapped (Ra 0.8–1.2 μm) and ensuring excellent stability during subsequent processing.

Bevels are crafted with T-type 200 ± 100 μm, which guarantees safety during handling and wafer durability.

We maintain strict quality standards. Our wafers achieve TTV ≤ 25 μm and BOW ≤ 35–40 μm, and WARP ≤ 120–150 μm.

We also limit scratches to ≤5 near the edge and ≤3 within the active area. We control bubble density and restrict chips to ≤0.2 mm² to ensure high-quality performance.

Finally, we deliver clean and residue-free, and individually packed wafers in CRC100 containers and protecting them during transport.

Why Choose Our Sapphire Wafers?

• Enhanced Thermal Management: Sapphire’s superior thermal conductivity makes it ideal for high-power applications.

• Durability: Sapphire’s hardness ensures long-lasting reliability in demanding environments.

• Epi-Ready Surface: The Ra < 0.3 nm polished surface is perfect for epitaxial growth.

• Industry Versatility: These wafers are widely used in LED manufacturing and semiconductor R&D, and 5G communication.

Our Manufacturing Process

Properties

• Material: >99.999% High Purity Mono-crystalline Al2O3 (Kyropoulos method)

• Diameter: 300 mm ± 0.2 mm

• Thickness Options: 800 μm / 1000 μm / 1200 μm (±50 μm)

• Orientation: C-Plane (0001), off-set toward M-axis/A-axis 0.0° ± 0.3°

• Notch Orientation: A-Plane (0001) 0° ± 1°

• wafer Notch Depth: 1.0–1.25 mm

• Notch Angle: 85–95°

• Front Surface: Epi-ready polished, Ra < 0.3 nm

• Back Surface: Lapped, Ra 0.8 μm < Ra < 1.2 μm

• Bevel: T-type, 200 μm ± 100 μm

• Flatness: TTV ≤ 25 μm, BOW ≤ 35–40 μm, WARP ≤ 120–150 μm

• Defect Control: ≤5 scratches near edge, ≤4 bubbles (10–60 μm), chips ≤0.2 mm²

• Cleaning: No aggregation, no residue, particle-free

• Packaging: CRC100 container, 1 pc/box

Applications

Our 12-inch sapphire wafers offer high versatility across a range of industries:

• LED & Micro-LED Manufacturing: Sapphire wafers serve as the optimal substrate for GaN epitaxy and which ensures high brightness and long lifespan.

• RF & Power Devices: They provide exceptional thermal insulation and electrical conductivity and making them ideal for high-frequency electronics.

• Laser Diodes: Sapphire’s optical transparency and durability make it the perfect choice for blue and UV and  high-power laser applications.

• 5G Communication: Sapphire wafers improve stability in high-frequency modules and which are crucial for 5G technologies.

• Optical Windows & Lenses: These wafers offer exceptional clarity and strength and making them ideal for optical components.

• Semiconductor R&D: Sapphire wafers are widely used in developing next-generation chips and advancing epitaxial technologies.

Q&A – Frequently Asked Questions

Q1: Why are sapphire wafers preferred over silicon for LED production?
A: Sapphire provides high thermal conductivity and chemical resistance, and mechanical strength and making it ideal for GaN-based LED growth.

These qualities result in better performance and longer lifespan compared to silicon.

Q2: Are the wafers ready for epitaxy?
A: Yes, the front surface is epi-ready polished (Ra < 0.3 nm) and which makes it perfectly suited for GaN-on-sapphire deposition.

Q3: What thickness options are available?
A: Our wafers come in standard thicknesses of 800 μm and 1000 μm, and 1200 μm. We can also provide custom thicknesses based on your specific needs.

Q4: How do you ensure quality?
A: We test every wafer for flatness and scratches and bubbles, and chips to ensure that they meet our rigorous quality standards.

Q5: What industries use 12-inch sapphire wafers?
A: These wafers are used in LED manufacturing and laser diodes and power electronics and RF ICs, optical windows, and 5G communication.