N-Type 8-Inch (200 mm) SiC Wafer — Mechanical Grade, 500 µm Thickness
8inch SiC wafer Product Overview
This product is an N-type conductive single-crystal silicon carbide (SiC) wafer, 8-inch (200 mm) in diameter, 500 µm thick, mechanical grade (polished). Mechanical grade wafers are primarily intended for process validation, equipment calibration, material machining, and educational or research purposes. They feature excellent flatness and mechanical strength, while allowing a more relaxed specification on cosmetic defects and electrical performance compared to device-grade wafers, making them ideal for cost-effective, high-volume testing and process optimization.
8inch SiC Key Features
Conductivity Type: N-type (nitrogen- or phosphorus-doped), suitable for conductive substrate simulation and testing.
Crystal Orientation: Available in common orientations (e.g., 4° off-axis <0001> or on-axis <0001>) to match process requirements.
Diameter: 200 mm (8-inch), compatible with mainstream large-diameter wafer processing equipment.
Thickness: 500 µm (±25 µm), providing mechanical stability and ease of handling.
Surface Finish: Single–side polished (SP) or double-side polished (DSP) with high surface smoothness for coating, etching, and testing processes.
Mechanical Grade Quality: Allows minor cosmetic imperfections (scratches, particles, point defects) without impacting process development or mechanical machining.
Thermal Stability: High thermal conductivity (~3–4 W/cm·K) and thermal stability, capable of withstanding >1600 °C.
Chemical Resistance: Excellent resistance to corrosion and oxidation, suitable for harsh chemical process testing.
Typical Applications
Equipment Calibration: For CMP, wafer slicing, cleaning, and other semiconductor tool setup.
Process Validation: Testing epitaxial growth, film deposition, and etching parameters.
Material Research: For universities and research labs studying SiC physical properties and surface preparation.
Training & Education: Hands-on practice in semiconductor manufacturing and materials science courses.
Mechanical Machining Trials: For sawing, grinding, and polishing experiments.
8inch SiC Technical Specifications
| Category | Specification |
|---|---|
| Material | Single-crystal silicon carbide (SiC) |
| Conductivity Type | N-type (nitrogen or phosphorus doped) |
| Crystal Orientation | <0001> (custom off-cut available) |
| Diameter | 200 mm (8-inch) |
| Thickness | 500 µm ±25 µm |
| Polishing | Single-side polished (SP) or double-side polished (DSP) |
| Surface Roughness | Ra ≤ 1 nm (polished side) |
| Defect Grade | Mechanical grade (minor cosmetic defects allowed) |
| Flatness (TTV) | ≤ 10 µm (typical) |
| Packaging | 25 wafers per cassette, cleanroom vacuum-sealed |
Packaging & Storage
Wafers are vacuum-sealed in anti-static bags and housed in industry-standard wafer cassettes (FOUP or plastic containers) to prevent contamination from particles and moisture.
Store in a clean, dry environment at 20–26 °C, <40% RH, away from direct sunlight and strong magnetic fields.
